FLASH
AS29F010
Austin Semiconductor, Inc.
AC CHARACTERISTICS: Erase and Program Operations
SYMBOL
JEDEC Std
SPEED OPTIONS
PARAMETER
-50
-60
-70
90
-120 -150 UNITS
1
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
t
t
50
60
70
90
120 150
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
Write Cycle Time
AVAV
WC
0
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
t
t
t
AVEL
ELAX
AS
AH
DS
DH
t
40
25
45
30
45
30
45
45
50
50
50
50
t
t
DVEH
EHDX
0
0
0
0
0
t
t
1
t
Output Enable Setup Time
OES
Read Recover Time Before Write
WE\ Setup Time
t
t
t
GHEL
GHEL
t
WLEL
WS
WH
WE\ Hold Time
t
t
EHWH
CE\ Pulse Width
t
t
25
30
35
45
50
50
ELEH
EHEL
CP
20
14
60
CE\ Pulse Width High
t
t
CPH
2
t
t
Byte Programming Operation
WHWH1 WHWH1
2
TYP t
t
Chip/Sector Erase Operation
WHWH2 WHWH2
NOTES:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
FIGURE 13: AC CHARACTERISTICS, Alternate CE\ Controlled Write
Operation Timings
NOTES:
1. PA = program address, PD = program data, SA = sector address, DQ7\ = complement of data input, DOUT = array data.
2. Figure indicates the last two bus cycles of the command sequence.
AS29F010
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 0.3 10/02
18
AUSTIN [ AUSTIN SEMICONDUCTOR ]
