EEPROM
Austin Semiconductor, Inc.
AS28C010
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(-55
o
C < T
C
< 125
o
C; Vcc = 5V +10%)
Test Conditions
Input Pulse Levels:
Input rise and fall times:
Output Load:
Reference levels for measuring timing:
Symbol
t
RC
t
CE
t
AA
t
OE
t
LZ(3)
t
OLZ
t
HZ(3)
t
OH
(3)
0.0V to 3.0V
< 20ns
1 TTL Gate +100pF (including scope and jig)
1.5V, 1.5V
-12
-15
MIN MAX MIN MAX
120
120
120
50
0
0
50
50
0
0
0
0
50
50
0
150
150
150
50
0
0
50
50
0
-20
MIN MAX
200
200
200
50
0
0
50
50
-25
UNITS
MIN MAX
250
250
250
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE\ LOW to Active Output
OE\ LOW to Active Output
CE\ HIGH to High Z Output
OE\ HIGH to High Z Output
Output Hold from Address Change
(3)
t
OHZ
Notes: 3) t
LZ
min., t
OLZ
min., and t
OHZ
are periodically sampled and not 100% tested. t
HZ
max. and t
OHZ
max. are measured,
with C
L
=5pF, from the point when CE\ or OE\ return HIGH (whichever occurs first) to the time when the
outputs are no longer driven.
AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
SYMBOL PARAMETER
t
WC
Write Cycle Time
t
AS
Address Setup Time
t
AH
tcs
t
CH
t
CW
t
OES
t
OEH
t
WP
t
WPH
t
DV
t
DS
t
DH
t
DW
t
BLC
AS28C010
Rev. 1.5 5/06
MIN
0
50
0
0
100
10
10
100
100
MAX
10
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
ns
ns
s
Address Hold Time
Write Setup Time
Write Hold Time
CE\ Pulse Width
OE\ HIGH Setup Time
OE\ HIGH Hold Time
WE\ Pulse Width
WE\ HIGH Recovery
Data Valid
Data Setup
Data Hold
Delay to Next Write
Byte Load Cycle
1
50
0
10
0.20
6
100
s
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AUSTIN [ AUSTIN SEMICONDUCTOR ]
