PRELIMINARY SPECIFICATION
Austin Semiconductor, Inc.
oltag
Volta g e
Comparator
AS111 RAD-TOL
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +15V, Vcm = 0V. "Delta calculations performed on /SPACE devices at group B, subgroup 5
only".
SYMBOL
Vio
PARAMETER
Input Offset
Voltage
CONDITIONS
Vin = 0V, Rs = 50 Ohms
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50 Ohms
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50 Ohms
Iib+
Input Bias
Current
Vin = 0V, Rs = 50K Ohms
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50K Ohms
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50K Ohms
Iib-
Input Bias
Current
Vin = 0V, Rs = 50K Ohms
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50K Ohms
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50K Ohms
Icex
Output Leakage
Current
Note 1:
Note 2:
Note 3:
Note
Note
Note
Note
Note
4:
5:
6:
7:
8:
+Vcc = 18V, -Vcc = -18V, Vout = 32V
NOTES
PIN-
NAME
MIN
-0.5
-0.5
-0.5
-12.5
-12.5
-12.5
-12.5
-12.5
-12.5
-5
MAX
0.5
0.5
0.5
12.5
12.5
12.5
12.5
12.5
12.5
5
UNIT
mV
mV
mV
nA
nA
nA
nA
nA
nA
nA
SUB-
GROUPS
1
1
1
1
1
1
1
1
1
1
Istb = -2mA at -55 C.
Calculated parameter.
Use DC tape for Ios and Vio(adj), Ave+ and Ave- as indicated in TAPE NAME section of
this JRETS.
Uses AC tape and hardware.
Actual min. limit used is 5mA due to test setup.
Datalog reading in K = V/mV.
Vid is voltage difference between inputs.
Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiaton end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5, Condition A.
AS111 RAD-TOL
Rev. 1.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
AUSTIN [ AUSTIN SEMICONDUCTOR ]
