欢迎访问ic37.com |
会员登录 免费注册
发布采购

D13007 参数 Datasheet PDF下载

D13007图片预览
型号: D13007
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN Silicon Power Transistor]
分类和应用: 晶体晶体管电感器
文件页数/大小: 5 页 / 311 K
品牌: AUK [ AUK CORP ]
 浏览型号D13007的Datasheet PDF文件第1页浏览型号D13007的Datasheet PDF文件第3页浏览型号D13007的Datasheet PDF文件第4页浏览型号D13007的Datasheet PDF文件第5页  
STD13007F  
Absolute maximum ratings  
Characteristic  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-base voltage  
(Ta=25°C)  
Unit  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
700  
V
400  
V
V
9
Collector current (DC)  
8
16  
A
Collector current (Pulse)  
Base current (DC)  
ICM  
A
IB  
4
A
Collector Power dissipation (Tc=25)  
PC  
40  
W
°C  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
-55~150  
Tstg  
Electrical Characteristics  
(Ta=25°C)  
Min. Typ. Max. Unit  
Characteristic  
Symbol  
Test Condition  
Collector-Emitter sustaining voltage  
BVCEO(sus) IC=10mA, IB=0  
400  
-
-
-
-
-
V
Emitter cut-off current  
DC Current gain  
IEBO  
hFE*  
VEB=9V, IC=0  
IC=2A, VCE=5V  
IC=5A, VCE=5V  
-
1
mA  
8
60  
30  
5
IC=2A, IB=0.4A  
IC=5A, IB=1A  
-
-
-
-
1
2
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
VCE(sat)  
*
V
V
IC=8A, IB=2A  
-
-
-
-
3
IC=2A, IB=0.4A  
1.2  
VBE(sat)  
*
IC=5A, IB=1A  
-
-
-
-
-
-
-
14  
80  
-
1.6  
-
Transition frequency  
Output capacitance  
Turn on Time  
fT  
Cob  
ton  
tstg  
tf  
VCE=10V, IC=0.5A, f=1MHz  
VCB=10V, IE=0, f=0.1MHz  
MHz  
-
1.6  
3
VCC=125V, IC=5A  
IB1=-IB2=1A  
Storage Time  
-
Fall Time  
-
0.7  
* Pulse test: PW300 , Duty cycle2%.  
KST-H035-000  
2