2N5551CN
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
(Ta=25°C)
Unit
V
Symbol
VCBO
VCEO
VEBO
IC
Rating
180
160
V
6
V
Collector current
600
mA
mW
°C
Collector power dissipation
Junction temperature
Storage temperature range
PC
400
TJ
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
(Ta=25°C)
Min. Typ. Max. Unit
Symbol
BVCEO
ICBO
Test Condition
IC=1mA, IB=0
160
-
-
V
nA
nA
-
VCB=180V, IE=0
-
-
100
100
IEBO
VEB=6V, IC=0
-
-
DC current gain
hFE (1)
hFE (2)
hFE (3)
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
80
80
30
-
-
DC current gain
-
250
-
DC current gain
-
-
*
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-
0.2
0.5
1
V
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)(1)
*
*
-
-
-
V
-
V
-
-
1
V
VBE(sat)(2)*
VBE
fT
-
0.65
150
3
0.85
-
V
Transition frequency
-
MHz
pF
Collector output capacitance
Cob
-
-
*
: Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
KSD-T0C061-000
2
AUK [ AUK CORP ]
