ATmega16M1/32M1/32C1/64M1/64C1 Automotive
1.4
ADC Characteristics in Differential Mode (Continued)
Test Conditions
Gain = 5x, 10x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Absolute accuracy
Gain = 20x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 40x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 5x, 10x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Integral Non Linearity
Gain = 20x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 40x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 5x, 10x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Differential Non Linearity
Gain = 20x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 40x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 5x, 10x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 20x, 40x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 5x, 10x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
Gain = 20x, 40x, V
CC
= 5V,
V
Ref
= 2.56V,
ADC clock = 2 MHz
V
REF
–3.0
DNL
INL
TUE
Symbol
Min
Typ
1.5
Max
3.5
Unit
T
A
= –40°C to +150°C, V
CC
= 4.5V to 5.5V (unless otherwise noted)
Parameters
1.5
4.0
LSB
1.5
6.0
0.1
1.5
0.2
2.5
LSB
0.7
4.5
0.1
1.5
0.2
2.0
LSB
0.3
4.0
+3.0
LSB
Gain error
–3.0
+3.0
–3.0
+3.0
LSB
Offset error
–4.0
2.56
+4.0
AVCC – 0.5
V
Reference voltage
1.5
Memory Endurance
EEPROM endurance: 50,000 Write/Erase cycles.
Flash endurance: 10,000 Write/Erase cycles.
5
7781D–AVR–01/10