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ATMEGA8L-8MUR 参数 Datasheet PDF下载

ATMEGA8L-8MUR图片预览
型号: ATMEGA8L-8MUR
PDF下载: 下载PDF文件 查看货源
内容描述: 8位爱特梅尔带有8K字节的系统内可编程闪存 [8-bit Atmel with 8KBytes In-System PRogrammable Flash]
分类和应用: 闪存微控制器和处理器外围集成电路异步传输模式PCATM时钟
文件页数/大小: 331 页 / 6705 K
品牌: ATMEL [ ATMEL ]
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ATmega8(L)  
Serial Programming  
Algorithm  
When writing serial data to the ATmega8, data is clocked on the rising edge of SCK.  
When reading data from the ATmega8, data is clocked on the falling edge of SCK. See Figure  
113 on page 232 for timing details.  
To program and verify the ATmega8 in the Serial Programming mode, the following sequence is  
recommended (see four byte instruction formats in Table 98 on page 233):  
1. Power-up sequence:  
Apply power between VCC and GND while RESET and SCK are set to “0”. In some sys-  
tems, the programmer can not guarantee that SCK is held low during Power-up. In this  
case, RESET must be given a positive pulse of at least two CPU clock cycles duration  
after SCK has been set to “0”  
2. Wait for at least 20ms and enable Serial Programming by sending the Programming  
Enable serial instruction to pin MOSI  
3. The Serial Programming instructions will not work if the communication is out of synchro-  
nization. When in sync. the second byte (0x53), will echo back when issuing the third  
byte of the Programming Enable instruction. Whether the echo is correct or not, all four  
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a  
positive pulse and issue a new Programming Enable command  
4. The Flash is programmed one page at a time. The page size is found in Table 89 on  
page 218. The memory page is loaded one byte at a time by supplying the 5 LSB of the  
address and data together with the Load Program memory Page instruction. To ensure  
correct loading of the page, the data Low byte must be loaded before data High byte is  
applied for a given address. The Program memory Page is stored by loading the Write  
Program memory Page instruction with the 7MSB of the address. If polling is not used,  
the user must wait at least tWD_FLASH before issuing the next page (see Table 97 on page  
232).  
Note: If other commands than polling (read) are applied before any write operation (FLASH,  
EEPROM, Lock Bits, Fuses) is completed, it may result in incorrect programming  
5. The EEPROM array is programmed one byte at a time by supplying the address and data  
together with the appropriate Write instruction. An EEPROM memory location is first  
automatically erased before new data is written. If polling is not used, the user must wait  
at least tWD_EEPROM before issuing the next byte (see Table 97 on page 232). In a chip  
erased device, no 0xFFs in the data file(s) need to be programmed  
6. Any memory location can be verified by using the Read instruction which returns the con-  
tent at the selected address at serial output MISO  
7. At the end of the programming session, RESET can be set high to commence normal  
operation  
8. Power-off sequence (if needed):  
Set RESET to “1”  
Turn VCC power off  
Data Polling Flash  
When a page is being programmed into the Flash, reading an address location within the page  
being programmed will give the value 0xFF. At the time the device is ready for a new page, the  
programmed value will read correctly. This is used to determine when the next page can be writ-  
ten. Note that the entire page is written simultaneously and any address within the page can be  
used for polling. Data polling of the Flash will not work for the value 0xFF, so when programming  
this value, the user will have to wait for at least tWD_FLASH before programming the next page. As  
a chip-erased device contains 0xFF in all locations, programming of addresses that are meant to  
contain 0xFF, can be skipped. See Table 97 on page 232 for tWD_FLASH value.  
231  
2486AA–AVR–02/2013  
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