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ATMEGA169PV 参数 Datasheet PDF下载

ATMEGA169PV图片预览
型号: ATMEGA169PV
PDF下载: 下载PDF文件 查看货源
内容描述: 微控制器,带有16K字节的系统内可编程闪存 [Microcontroller with 16K Bytes In-System Programmable Flash]
分类和应用: 闪存微控制器
文件页数/大小: 390 页 / 3485 K
品牌: ATMEL [ ATMEL ]
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ATmega169P  
applied for a given address. The Program Memory Page is stored by loading the Write  
Program Memory Page instruction with the 7 MSB of the address. If polling (RDY/BSY) is  
not used, the user must wait at least tWD_FLASH before issuing the next page. (See Table  
26-14.) Accessing the serial programming interface before the Flash write operation  
completes can result in incorrect programming.  
5. A: The EEPROM array is programmed one byte at a time by supplying the address and  
data together with the appropriate Write instruction. An EEPROM memory location is first  
automatically erased before new data is written. If polling (RDY/BSY) is not used, the  
user must wait at least tWD_EEPROM before issuing the next byte (See Table 26-14). In a  
chip erased device, no 0xFFs in the data file(s) need to be programmed.  
B: The EEPROM array is programmed one page at a time. The Memory page is loaded  
one byte at a time by supplying the 2 LSB of the address and data together with the Load  
EEPROM Memory Page instruction. The EEPROM Memory Page is stored by loading  
the Write EEPROM Memory Page Instruction with the 4 MSB of the address. When using  
EEPROM page access only byte locations loaded with the Load EEPROM Memory Page  
instruction is altered. The remaining locations remain unchanged. If polling (RDY/BSY) is  
not used, the user must wait at least tWD_EEPROM before issuing the next page (See Table  
26-14). In a chip erased device, no 0xFF in the data file(s) need to be programmed.  
6. Any memory location can be verified by using the Read instruction which returns the con-  
tent at the selected address at serial output MISO.  
7. At the end of the programming session, RESET can be set high to commence normal  
operation.  
8. Power-off sequence (if needed):  
Set RESET to “1”.  
Turn VCC power off  
Table 26-14. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location  
Symbol  
Minimum Wait Delay  
4.5 ms  
tWD_FUSE  
tWD_FLASH  
tWD_EEPROM  
tWD_ERASE  
4.5 ms  
9.0 ms  
9.0 ms  
Figure 26-11. Serial Programming Waveforms  
SERIAL DATA INPUT  
(MOSI)  
MSB  
LSB  
LSB  
SERIAL DATA OUTPUT  
(MISO)  
MSB  
SERIAL CLOCK INPUT  
(SCK)  
SAMPLE  
311  
8018A–AVR–03/06  
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