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AT45DB161D-TU 参数 Datasheet PDF下载

AT45DB161D-TU图片预览
型号: AT45DB161D-TU
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位2.5伏或2.7伏的DataFlash [16-megabit 2.5-volt or 2.7-volt DataFlash]
分类和应用:
文件页数/大小: 56 页 / 1811 K
品牌: ATMEL [ ATMEL ]
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7.6  
Sector Erase  
The Sector Erase command can be used to individually erase any sector in the main memory.  
There are 16 sectors and only one sector can be erased at one time. To perform sector 0a or  
sector 0b erase for the standard DataFlash page size (528 bytes), an opcode of 7CH must be  
loaded into the device, followed by three address bytes comprised of 2 don’t care bits, 9 page  
address bits (PA11 - PA3) and 13 don’t care bits. To perform a sector 1-15 erase, the opcode  
7CH must be loaded into the device, followed by three address bytes comprised of 2 don’t care  
bits, 4 page address bits (PA11 - PA8) and 18 don’t care bits. To perform sector 0a or sector 0b  
erase for the binary page size (512 bytes), an opcode of 7CH must be loaded into the device,  
followed by three address bytes comprised of 3 don’t care bit and 9 page address bits (A20 -  
A12) and 12 don’t care bits. To perform a sector 1-15 erase, the opcode 7CH must be loaded  
into the device, followed by three address bytes comprised of 3 don’t care bit and 4 page  
address bits (A20 - A17) and 17 don’t care bits. The page address bits are used to specify any  
valid address location within the sector which is to be erased. When a low-to-high transition  
occurs on the CS pin, the part will erase the selected sector. The erase operation is internally  
self-timed and should take place in a maximum time of tSE. During this time, the status register  
and the RDY/BUSY pin will indicate that the part is busy.  
Table 7-2.  
Sector Erase Addressing  
PA11/ PA10/  
PA9/  
A18  
PA8/  
A17  
PA7/  
A16  
PA6/  
A15  
PA5/  
A14  
PA4/  
A13  
PA3/  
A12  
PA2/  
A11  
PA1/  
A10  
PA0/  
A9  
A20  
A19  
Sector  
0
0
0
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
0a  
0b  
1
0
0
0
0
X
X
X
X
X
X
X
X
X
X
0
0
2
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
12  
13  
14  
15  
7.7  
Chip Erase(1)  
The entire main memory can be erased at one time by using the Chip Erase command.  
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH  
must be clocked into the device. Since the entire memory array is to be erased, no address  
bytes need to be clocked into the device, and any data clocked in after the opcode will be  
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-  
serted to start the erase process. The erase operation is internally self-timed and should take  
place in a time of tCE. During this time, the Status Register will indicate that the device is busy.  
The Chip Erase command will not affect sectors that are protected or locked down; the contents  
of those sectors will remain unchanged. Only those sectors that are not protected or locked  
down will be erased.  
Note:  
1. Refer to the errata regarding Chip Erase on page 55.  
10  
AT45DB161D  
3500M–DFLASH–04/09