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AT24C32-10PC-2.5 参数 Datasheet PDF下载

AT24C32-10PC-2.5图片预览
型号: AT24C32-10PC-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 2线串行EEPROM [2-Wire Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 15 页 / 240 K
品牌: ATMEL [ ATMEL ]
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AT24C32/64  
The data word address lower 5 bits are internally incre-  
mented following the receipt of each data word. The higher  
data word address bits are not incremented, retaining the  
memory page row location. When the word address, inter-  
nally generated, reaches the page boundary, the following  
byte is placed at the beginning of the same page. If more  
than 32 data words are transmitted to the EEPROM, the  
data word address will “roll over” and previous data will be  
overwritten.  
Device Addressing  
The 32K/64K EEPROM requires an 8-bit device address  
word following a start condition to enable the chip for a read  
or write operation (refer to Figure 1). The device address  
word consists of a mandatory one, zero sequence for the  
first four most significant bits as shown. This is common to  
all 2-wire EEPROM devices.  
The 32K/64K uses the three device address bits A2, A1, A0  
to allow as many as eight devices on the same bus. These  
bits must compare to their corresponding hardwired input  
pins. The A2, A1, and A0 pins use an internal proprietary  
circuit that biases them to a logic low condition if the pins  
are allowed to float.  
ACKNOWLEDGE POLLING: Once the internally-timed  
write cycle has started and the EEPROM inputs are dis-  
abled, acknowledge polling can be initiated. This involves  
sending a start condition followed by the device address  
word. The read/write bit is representative of the operation  
desired. Only if the internal write cycle has completed will  
the EEPROM respond with a zero, allowing the read or  
write sequence to continue.  
The eighth bit of the device address is the read/write opera-  
tion select bit. A read operation is initiated if this bit is high  
and a write operation is initiated if this bit is low.  
Upon a compare of the device address, the EEPROM will  
output a zero. If a compare is not made, the device will  
return to standby state.  
Read Operations  
Read operations are initiated the same way as write opera-  
tions with the exception that the read/write select bit in the  
device address word is set to one. There are three read  
operations: current address read, random address read  
and sequential read.  
NOISE PROTECTION: Special internal circuitry placed on  
the SDA and SCL pins prevent small noise spikes from  
activating the device. A low-VCC detector (5-volt option)  
resets the device to prevent data corruption in a noisy envi-  
ronment.  
CURRENT ADDRESS READ: The internal data word  
address counter maintains the last address accessed dur-  
ing the last read or write operation, incremented by one.  
This address stays valid between operations as long as the  
chip power is maintained. The address “roll over” during  
read is from the last byte of the last memory page, to the  
first byte of the first page. The address “roll over” during  
write is from the last byte of the current page to the first  
byte of the same page.  
DATA SECURITY: The AT24C32/64 has a hardware data  
protection scheme that allows the user to write protect the  
upper quadrant (8/16K bits) of memory when the WP pin is  
at VCC  
.
Write Operations  
BYTE WRITE: A write operation requires two 8-bit data  
word addresses following the device address word and  
acknowledgment. Upon receipt of this address, the  
EEPROM will again respond with a zero and then clock in  
the first 8-bit data word. Following receipt of the 8-bit data  
word, the EEPROM will output a zero and the addressing  
device, such as a microcontroller, must terminate the write  
sequence with a stop condition. At this time the EEPROM  
enters an internally-timed write cycle, tWR, to the nonvolatile  
memory. All inputs are disabled during this write cycle and  
the EEPROM will not respond until the write is complete  
(refer to Figure 2).  
Once the device address with the read/write select bit set  
to one is clocked in and acknowledged by the EEPROM,  
the current address data word is serially clocked out. The  
microcontroller does not respond with an input zero but  
does generate a following stop condition (refer to Figure 4).  
RANDOM READ: A random read requires a “dummy” byte  
write sequence to load in the data word address. Once the  
device address word and data word address are clocked in  
and acknowledged by the EEPROM, the microcontroller  
must generate another start condition. The microcontroller  
now initiates a current address read by sending a device  
address with the read/write select bit high. The EEPROM  
acknowledges the device address and serially clocks out  
the data word. The microcontroller does not respond with a  
zero but does generate a following stop condition (refer to  
Figure 5).  
PAGE WRITE: The 32K/64K EEPROM is capable of 32-  
byte page writes.  
A page write is initiated the same way as a byte write, but  
the microcontroller does not send a stop condition after the  
first data word is clocked in. Instead, after the EEPROM  
acknowledges receipt of the first data word, the microcon-  
troller can transmit up to 31 more data words. The  
EEPROM will respond with a zero after each data word  
received. The microcontroller must terminate the page  
write sequence with a stop condition (refer to Figure 3).  
SEQUENTIAL READ: Sequential reads are initiated by  
either a current address read or a random address read.  
After the microcontroller receives a data word, it responds  
with an acknowledge. As long as the EEPROM receives an  
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