Program/Code
Memory
The T89C5115 implement 16K Bytes of on-chip program/code memory.
The Flash memory increases EPROM and ROM functionality by in-circuit electrical era-
sure and programming. Thanks to the internal charge pump, the high voltage needed for
programming or erasing Flash cells is generated on-chip using the standard VDD volt-
age. Thus, the Flash memory can be programmed using only one voltage and allows In-
System Programming (ISP). Hardware programming mode is also available using spe-
cific programming tool.
Figure 12. Program/Code Memory Organization
3FFFh
16K Bytes
Internal
Flash
0000h
Flash Memory
Architecture
T89C5115 features two on-chip Flash memories:
•
Flash memory FM0:
containing 16K Bytes of program memory (user space) organized into 128 bytes
pages,
•
Flash memory FM1:
2K Bytes for boot loader and Application Programming Interfaces (API).
The FM0 can be program by both parallel programming and Serial ISP whereas FM1
supports only parallel programming by programmers. The ISP mode is detailed in the
’In-System Programming’ section.
All Read/Write access operations on Flash memory by user application are managed by
a set of API described in the ’In-System Programming’ section.
Figure 13. Flash Memory Architecture
FFFFh
2K Bytes
Flash Memory
Boot Space
Hardware Security (1 byte)
Extra Row (128 Bytes)
FM1
F800h
Column Latches (128 Bytes)
FM1 mapped between F800h and
FFFFh when bit ENBOOT is set in
AUXR1 register
3FFFh
16K Bytes
Flash Memory
User Space
FM0
0000h
32
AT89C5115
4128F–8051–05/06
ATMEL [ ATMEL ]
