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5962-8959847QTC 参数 Datasheet PDF下载

5962-8959847QTC图片预览
型号: 5962-8959847QTC
PDF下载: 下载PDF文件 查看货源
内容描述: 弧度。宽容128K ×8的超低功耗5V CMOS SRAM [Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 337 K
品牌: ATMEL [ ATMEL CORPORATION ]
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M65608E
Electrical Characteristics
Absolute Maximum Ratings
Supply voltage to GND potential:..........................-0.5V + 7.0V
DC input voltage: ..............................GND - 0.5V to VCC + 0.5
DC output voltage high Z state: ........GND - 0.5V to VCC + 0.5
Storage temperature: ..................................... -65°C to +150°C
Output current into outputs (low): .................................. 20 mA
Electro statics discharge voltage: ............................... > 2001V
(MIL STD 883D method 3015.3)
*NOTE:
Stresses greater than those listed under Absolute Max-
imum Ratings may cause permanent damage to the
device.This is a stress rating only and functional opera-
tion of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Military Operating Range
Operating Voltage
5V + 10%
Operating Temperature
-55
°
C to + 125
°
C
Recommended DC Operating
Conditions
Parameter
Description
Minimum
4.5
0.0
GND - 0.5
2.2
Typical
5.0
0.0
0.0
Maximum
5.5
0.0
0.8
VCC + 0.5
Unit
V
V
V
V
V
CC
GND
V
IL
V
IH
Capacitance
Parameter
Supply voltage
Ground
Input low voltage
Input high voltage
Description
Minimum
Typical
Maximum
8
8
Unit
pF
pF
Cin
(1)
Cout
(1)
Note:
Input low voltage
Output high
voltage
1. Guaranteed but not tested.
4
4151I–AERO–03/04