Consumption
AT68166FT-25
AT68166FT-20
AT68166FT-18
(preliminary)
TAVAV/TAVAW
Test Condition
Symbol
Description
Unit
Value
Standby
Supply
Current
(1)
ICCSB
–
–
10
8
7
6
7.5
7
mA
max
Standby
Supply
Current
(2)
ICCSB1
mA
mA
max
max
18 ns
20 ns
25 ns
50 ns
1 µs
–
–
–
170
165
145
80
(3)
165
145
80
ICCOP
Dynamic
Operating
Current
Read per
byte
150
85
15
12
12
18 ns
20 ns
25 ns
50 ns
1 µs
–
–
145
140
135
115
105
(4)
–
140
135
115
105
ICCOP
Dynamic
Operating
Current
Write per
byte
150
125
110
mA
max
Notes: 1. All CSx >VIH
2. All CSx > VCC - 0.3V
3. F = 1/TAVAV, Iout = 0 mA, WEx = OE = VIH, VIN = GND/VCC, VCC max.
4. F = 1/TAVAW, Iout = 0 mA, WEx = VIL, OE = VIH , VIN = GND/VCC, VCC max.
Data Retention
Mode
Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage and sup-
ply current are guaranteed over temperature. The following rules insure data retention:
1. During data retention chip select CSx must be held high within VCC to VCC -0.2V.
2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, mini-
mizing power dissipation.
3. During power-up and power-down transitions CSx and OE must be kept between VCC
0.3V and 70% of VCC.
+
4. The RAM can begin operation > tR ns after VCC reaches the minimum operation voltages
(3V).
Figure 5. Data Retention Timing
vcc
CSx
8
AT68166FT
7531H–AERO–04/09
ATMEL [ ATMEL ]
