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5962-0520802VYC 参数 Datasheet PDF下载

5962-0520802VYC图片预览
型号: 5962-0520802VYC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射512K ×8的超低功耗CMOS SRAM [Rad Hard 512K x 8 Very Low Power CMOS SRAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 13 页 / 347 K
品牌: ATMEL [ ATMEL CORPORATION ]
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DC Parameters
Parameter
IIX
(1)
IOZ
(1)
VOL
(2)
VOH
(3)
1.
Description
Input leakage current
Output leakage
current
Output low voltage
Output high voltage
Minimum
-1
-1
2.4
Typical
Maximum
1
1
0.4
Unit
μA
μA
V
V
GND < V
IN
< V
CC
, GND < V
OUT
< V
CC
Output Disabled.
2.
3.
V
CC
min. I
OL
= 8 mA
V
CC
min. I
OH
= -4 mA.
Consumption
Symbol
I
CCSB (1)
I
CCSB1 (2)
Description
Standby Supply
Current
Standby Supply
Current
TAVAV/TAVAW
Test Condition
AT60142F-15
2
Unit
mA
Value
max
15 ns
25 ns
50 ns
1 µs
15 ns
25 ns
50 ns
1 µs
1.8
180
150
75
10
150
130
120
100
mA
max
I
CCOP(3)
Read
Dynamic Operating
Current
mA
max
I
CCOP(4)
Write
Dynamic Operating
Current
mA
max
1.
2.
3.
4.
CS
>V
IH
CS
>
V
CC
- 0.3V
F = 1/
TAVAV
, I
out
= 0 mA, WE = OE = V
IH
, V
IN
= GND/V
CC
, V
CC
max.
F = 1/
TAVAW
, I
out
= 0 mA, WE = V
IL
, OE = V
IH
, V
IN
= GND/V
CC
, V
CC
max.
5
AT60142F
4408G–AERO–04/09