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5962-0520801QYC 参数 Datasheet PDF下载

5962-0520801QYC图片预览
型号: 5962-0520801QYC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射512K ×8 5V容限非常低功耗CMOS SRAM [Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 347 K
品牌: ATMEL [ ATMEL ]
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AT60142FT  
Data Retention Mode  
Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage  
and supply current are guaranteed over temperature. The following rules insure data  
retention:  
1. During data retention chip select CS must be held high within VCC to VCC -0.2V.  
2. Output Enable (OE) should be held high to keep the RAM outputs high imped-  
ance, minimizing power dissipation.  
3. During power-up and power-down transitions CS and OE must be kept between  
VCC + 0.3V and 70% of VCC.  
4. The RAM can begin operation > tR ns after VCC reaches the minimum operation  
voltages (3V).  
Figure 1. Data Retention Timing  
Data Retention Characteristics  
Parameter  
Description  
Min  
Typ TA = 25°C  
Max  
Unit  
VCCDR  
VCC for data retention  
2.0  
V
Chip deselect to data  
retention time  
tCDR  
0.0  
ns  
ns  
Operation recovery  
time  
(1)  
tR  
tAVAV  
1.5 (AT60142FT-15)  
1.3 (AT60142FT-17)  
(2)  
ICCDR  
Data retention current  
0.700  
mA  
1.  
2.  
TAVAV = Read cycle time.  
CS = VCC, VIN = GND/VCC  
.
6
7726B–AERO–04/09  
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