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5962-0520801QXC 参数 Datasheet PDF下载

5962-0520801QXC图片预览
型号: 5962-0520801QXC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射512K ×8 5V容限非常低功耗CMOS SRAM [Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 13 页 / 291 K
品牌: ATMEL [ ATMEL CORPORATION ]
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AT60142FT
Electrical Characteristics
Absolute Maximum Ratings*
Supply Voltage to GND Potential:.........................-0.5V + 4.6V
DC Input Voltage:...........................................GND -0.5V to 7V
DC Output Voltage High Z State: ................GND -0.5V to 4.6V
Storage Temperature: ................................... -65°C to + 150°C
Output Current Into Outputs (Low): ............................... 20 mA
Electro Statics Discharge Voltage:..... .........> 2000V (MIL STD
883D Method 3015.3)
*NOTE:
Stresses beyond those listed under "Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Military Operating Range
Operating Voltage
Military
3.3
+
0.3V
Operating Temperature
-55°C to + 125°C
Recommended DC Operating Conditions
Parameter
Vcc
GND
V
IL
V
IH
Note:
Description
Supply voltage
Ground
Input low voltage
Input high voltage
Min
3
0.0
GND - 0.3
2.2
Typ
3.3
0.0
0.0
Max
3.6
0.0
0.8
5.5
(1)
Unit
V
V
V
V
1. 5.8V in transient conditions.
Capacitance
Parameter
C
in(1)
C
out(1)
Note:
Description
Input capacitance
Output capacitance
Min
Typ
Max
12
12
Unit
pF
pF
1. Guaranteed but not tested.
4
7726A–AERO–07/07