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45DB041B 参数 Datasheet PDF下载

45DB041B图片预览
型号: 45DB041B
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位2.5伏,只有2.7伏,只有数据闪存 [4-megabit 2.5-volt Only or 2.7-volt Only DataFlash]
分类和应用: 闪存
文件页数/大小: 33 页 / 231 K
品牌: ATMEL [ ATMEL ]
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Figure 1. Algorithm for Sequentially Programming or Reprogramming the Entire Array  
START  
provide address  
and data  
BUFFER WRITE  
(84H, 87H)  
MAIN MEMORY PAGE PROGRAM  
THROUGH BUFFER  
(82H, 85H)  
BUFFER TO MAIN  
MEMORY PAGE PROGRAM  
(83H, 86H)  
END  
Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-  
page.  
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer  
to Main Memory Page Program operation.  
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page  
within the entire array.  
26  
AT45DB041B  
1938F–DFLSH–10/02  
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