A2S263
SILICON SCHOTTKY BARRIER DETECTOR DIODE
PACKAGE STYLE 01
DESCRIPTION:
The
ASI A2S263
is a Silicon P-Type
Schottcky Barrier Zero Bias Detector
Diode Housed in a Hermetically
Sealed Glass Package.
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
O
O
20 mA
2.5 V
100 mW @ T
C
= 25 C
-60 C to +125 C
-60 C to +125 C
O
O
O
CATHODE INDICATED BY COLOR BAND
NONE
CHARACTERISTICS
SYMBOL
V
b
t
SS
V
o
R
V
Tsold
I
r
= 100
µA
T
C
= 25 C
O
TEST CONDITIONS
BIAS = NONE
F = 10 GHz
R
L
= 27 KΩ
B.W. = 375 KHz
LOW FREQUENCY CUTOFF
= 100 Hz
MINIMUM TYPICAL
0.5
-59
5000
800
8000
1.5
MAXIM
UNITS
V
dBM
µ
µ
V/µW
f = 10 GHz
t = 5.0 SEC.
P
in
= -40 dBM
BIAS = NONE
6000
+230
Ohms
O
C
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
