40822
MOS FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The
ASI 40822
is a N-Channel Dual-
Gate Depletion Type Transistor With
Monolithic Gate Protection Diodes,
used in RF,IF Amplifier and Mixer
Applications up to 150 MHz.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
I
D
V
D
P
DISS
T
J
T
STG
50 mA
24 V
330 mW @ T
A
= 25
O
C
-65
O
C to +175
O
C
-65 C to +175 C
O
O
1 = Drain
3 = Gate #1
2 = Gate #2
4 = Source, Case, and Substrate
CHARACTERISTICS
SYMBOL
V
G1S(OFF)
V
G2S(OFF)
I
G1SSF
I
G1SSR
I
G2SSF
I
G2SSR
I
DS
V
(BR)G1
V
(BR)G2
g
fs
C
rss
C
iss
C
oss
G
PS
NF
V
DS
= 15 V
V
DS
= 15 V
T
A
= 25 C
O
NONE
TEST CONDITIONS
V
G2S
= 4.0 V
V
G1S
= 0 V
I
D
= 50
µA
I
D
= 50
µA
MINIMUM
TYPICAL
-2.0
-2.0
MAXIMUM
-4.0
-4.0
50
50
50
50
UNITS
V
V
µA
µA
µA
µA
mA
V
V
µmho
V
G1S
= 6.0 V
V
G2S
= 6.0 V
V
DS
= 15 V
I
G1
=
±100 µA
I
G2
=
±100 µA
V
DS
= 15 V
f = 1.0 KHz
V
DS
= 15 V
f = 1.0 MHz
V
DS
= 15 V
= 200 MHz
V
G2S
= V
DS
= 0 V
V
G1S
= V
DS
= 0 V
V
G1S
= 0 V
V
G2S
= 4.0 V
5.0
15
9.0
9.0
V
G2S
= 4.0 V
V
G2S
= 4.0 V
V
G2S
= 4.0 V
I
D
= 10 mA
I
D
= 10 mA
I
D
= 10 mA
f
0.005
6.5
2.0
19
24
2.0
12000
V
G1S
= -6.0 V V
G2S
= V
DS
= 0 V
V
G2S
= -6.0 V V
G1S
= V
DS
= 0 V
30
0.03
9.5
pF
dB
3.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
