2SK410
SILICON N-CHANNEL MOS FET
PACKAGE STYLE .500 6L FLG
DESCRIPTION:
The
ASI 2SK410
is a silicon n-channel mos fet
designed for HF/VHF power amplifier
applications.
D
C
A
3
1
2x Ø N
FU LL R
2
4
E
FEATURES:
•
P
G
= 17 dB typ. at 100 W/28 MHz
•
Omnigold™
Metalization System
•
Common Source configuration
•
RoHS compliant
G
H
D IM
A
B
C
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
D
E
F
G
H
I
J
K
L
M
N
.120 / 3.05
.970 / 24.64
.090 / 2.29
.150 / 3.81
M IN IM U M
in ch es / m m
B
.725/18,42
F
K
J
I
L
M
M A X IM U M
inc he s / m m
.150 / 3.43
.045 / 1.14
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.125 / 3.18
.725 / 18.42
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
MAXIMUM RATINGS
I
D
V
DSS
V
GSS
P
CH
T
CH
T
STG
8A
180 V
±20 V
120 W @ T
C
= 25 °C
-55 °C to +150 °C
-55 °C to +150 °C
1 = COLLECTOR
2 = BASE
3&4 = EMITTER
CHARACTERISTICS
SYMBOL
V
(BR)DSS
V
(BR)GSS
V
GS(OFF)
I
DSS
V
DS(on)
|γ
fs|
C
ISS
C
OSS
C
RSS
P
OUT
η
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
G
= ±100 µA
I
D
= 1.0 mA
V
DSS
= 180 V
I
D
= 4.0 A
I
D
= 3.0 A
V
GS
= 5.0 V
V
GS
= -5.0 V
V
GS
=
V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 10 V
V
DS
= 20 V
V
DS
= 0.0 V
V
DS
= 50. V
V
GD
= - 50. V
V
DD
= 80 V
I
DQ
=100 mA
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
180
±20
0.5
3.8
0.9
1.25
350
220
15
140
80
3.0
1.0
6.0
UNITS
V
V
V
mA
V
S
pF
f = 28 MHz
P
IN
= 5 W
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
