2SC3133
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-220AB (COMMON EMITTER)
DESCRIPTION:
The
ASI 2SC3133
is Designed for RF
Power amplifiers in HF band mobile radio
Applications.
MAXIMUM RATINGS
I
C
V
CE
V
CB
P
DISS
T
STG
θ
JC
6.0 A
25 V
60 V
20 W @ T
C
= 25 °C
-65 °C to +150 °C
6.25 °C/W
1 = BASE
3 = COLLECTOR
2 = EMITTER
TAB = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
P
O
η
C
I
C
= 10 mA
T
C
= 25 °C
TEST CONDITIONS
I
C
= 5.0 mA
I
E
= 1.0 mA
V
CB
= 30 V
V
EB
= 4.0 V
V
CE
= 12 V
V
CC
= 12 V
I
C
= 10 mA
P
IN
= 0.5 W
f = 27 MHz
MINIMUM TYPICAL MAXIMUM
25
60
5.0
500
500
10
13
60
50
16
70
180
UNITS
V
V
V
µA
µA
---
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
