2SC2879
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2SC2879
is a 12.5 V
transistor designed primarily for SSB
linear power amplifier applications up
tp 28 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FULL R
FEATURES:
•
P
G
= 13 Typ. min. at 100 W/28 MHz
•
IMD
3
= -24 dBc max. at 100 W
(PEP)
•
Omnigold™
Metalization System
E
C
Ø.125 NOM.
C
B
B
E
H
D
G
F
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
25 A
45 V
18 V
4.0 V
250 W @ T
C
= 25 °C
-65 °C to +175 °C
-65 °C to +175 °C
0.6 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
.980 / 24.89
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.245 / 6.22
.720 / 18.28
.125 / 3.18
MINIMUM
inches / mm
I J
K
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
h
FE
C
OB
G
P
η
C
IMD
3
Z
IN
Z
OUT
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CE
= 12.5 V
P
OUT
= 100 W
V
CC
= 12.5 V
V
CC
= 12.5 V
I
idle
= 100 mA
I
C
= 10 A
f = 1.0 MHz
f = 28 MHz
MINIMUM TYPICAL MAXIMUM
45
18
4.0
10
700
13.0
35
---
---
15.2
-24
150
UNITS
V
V
V
---
pF
dB
%
dBc
Ω
Ω
P
OUT
= 100 W
P
OUT
= 100 W
f = 28 MHz
f = 28 MHz
1.45 – j0.95
1.45 – J1.0
---
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
