2SC2585
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
2SC2585
is a Common Emitter
Device Designed for Low Niose
Amplifier and Medium Power Oscillator
Applications up to 8.5 GHz.
PACKAGE STYLE
MAXIMUM RATINGS
I
C
V
CEO
V
CBO
V
EB
P
T
T
J
T
STG
θ
JC
O
O
65 mA
12 V
25 V
1.5 V
400 mW @ T
C
= 166 C
-65 C to +200 C
-65 C to +200 C
85 C/W
O
O
O
O
DIMENSIONS IN MILLIMETERS
1 = BASE
3 = COLLECTOR
2 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
h
FE
f
t
C
cb
|
|
S21E|
G
NF
M
AG
NF
2
T
C
= 25 C
O
TEST CONDITIONS
V
CB
= 8.0 V
V
EB
= 1.0 V
V
CE
= 8.0 V
V
CE
= 8.0 V
V
CB
= 10 V
V
CE
= 8.0 V
I
C
= 20 mA
I
C
= 7.0 mA
I
C
= 20 mA
f = 1.0 GHz
f = 1.0 MHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
100
100
50
115
8.5
0.2
18.0
11.0
6.5
11.0
15.0
10.0
2.0
2.5
0.6
250
UNITS
µ
A
µ
A
---
GHz
pF
dB
dB
dB
dB
10.0
V
CE
= 8.0 V
V
CE
= 8.0 V
V
CE
= 8.0 V
I
C
= 7.0 mA
I
C
= 10 mA
I
C
= 7.0 mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
