2SC1252
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The
2SC1252
is a High Frequency
Transistor, Designed for Wide Band
Amplifier Applications up to 500 MHz.
PACKAGE STYLE TO-39
FEATURES INCLUDE:
•
High Gain
-17 dB Typ.
@ 200 MHz
•
Low
NF - 3.0 dB Typ.
@ 200 MHz
•
Hermetic
TO-39
Package
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
400 mA
45 V
25 V
5 W @ T
C
= 25 °C
-65 to +200 °C
-65 to +200 °C
35 °C/W
1 = Emitter
2 = Base
3 & 4 = Collector (Case)
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
I
CBO
I
EBO
h
FE
f
t
C
OB
G
PE
NF
I
C
= 100
µA
V
CE
= 30 V
V
EB
= 2.0 V
V
CE
= 10 V
V
CE
= 15 V
V
CE
= 15 V
V
CB
= 15 V
V
CE
= 15 V
V
CE
= 15 V
I
C
= 5.0 mA
T
C
= 25 °C
TEST CONDITIONS
MINIMUM
25
45
TYPICAL
MAXIMUM
UNITS
V
V
100
500
I
C
= 50 mA
I
C
= 15 mA
I
C
= 70 mA
f = 1.0 MHz
I
C
= 50 mA
I
C
= 30 mA
f = 200 MHz
f = 200 MHz
15
17
3.0
4.0
f = 200 MHz
20
1200
1400
3.0
200
nA
nA
---
MHz
pF
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
