2SC1251
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
2SC1251
is a Common Emitter
Device Designed for High Linearity
Class A Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
•
Direct Replacement for
NE74020
•
High Gain - 10 dB min. @ 1.0 GHz
•
Gold Metalization
PACKAGE STYLE .204 4L STUD
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
O
O
300 mA
45 V
5.3W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
33 C/W
O
O
O
O
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
h
FE
C
OB
P
G
P
1dB
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 10 mA
I
C
= 10 mA
I
E
= 1.0 mA
V
CE
= 5.0 V
V
CB
= 15 V
V
CE
= 15 V
I
C
= 100 mA
I
C
= 100 mA
f = 1.0 MHz
P
OUT
= 0.5 W
f = 1000 MHz
MINIMUM TYPICAL MAXIMUM
25
45
3.0
20
200
3.0
13
+27
+29
UNITS
V
V
V
---
pF
dB
dBm
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
