2N6439
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2N6439
is a Common
Emitter Device Designed For Large
signal output amplifier stages in the
225-400 MHz range.
PACKAGE STYLE .500 6L FLG
FEATURES INCLUDE:
•
Internal Input Matching Network
•
30:1
Load VSWR Capability
•
All Gold Metalization
MAXIMUM RATINGS
V
CB
P
DISS
60 V
146 W @ T
C
= 25 °C
1 = Collector
2 = Base
3 & 4 = Emitter
T
STG
θ
JC
-65 °C to +200 °C
1.2 °C/W
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CBO
h
FE
C
OB
G
Pe
G
Pe
η
C
Ψ
V
CE
= 28 V
I
C
= 50 mA
I
C
= 50 mA
I
E
= 5.0 mA
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
33
60
4.0
UNITS
V
V
V
I
C
= 1.0 A
f = 1 MHz
P
OUT
= 60 W
P
OUT
= 60 W
f =225- 400 MHz
f = 400 MHz
10
67
7.8
7.8
55
30:1
8.5
10.0
100
75
---
pF
dB
%
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
