2N6199
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2N6199
is Designed for VHF
Class C Power Amplifier Applications
up to 250 MHz.
PACKAGE STYLE .380" 4L STUD
.112x45°
A
B
C
E
ØC
FEATURES:
•
P
G
= 10 dB Typical at 25 W/175 MHz
• ∞
Load
VSWR
at Rated Conditions
•
Omnigold™
Metallization System
D
E
B
H
I
J
#8-32 UNC-2A
F
E
G
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
4.0 A
65 V
40 W @ T
C
= 25 °C
-55 °C to +200 °C
-55 °C to +150 °C
4.4 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10864
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
c
T
C
= 25 °C
TEST CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
OUT
= 25 W
I
C
= 200 mA
f = 1.0 MHz
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65
35
4.0
2.0
10
50
8.5
50
10
60
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV.A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
