2N5642
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2N5642
is Designed for
28 V Large Signal Class C Amplifier
Applications up to 175 MHz.
FEATURES INCLUDE:
•
Emitter Ballasting
•
Gold Metalization
•
3/8" SOE
Stud Package
PACKAGE STYLE .380" 4L STUD
MAXIMUM RATINGS
I
C
V
CE
V
CB
P
DISS
T
J
T
STG
θ
JC
O
O
3.0 A
35 V
65 V
30 W @ T
C
= 25 C
-65 C to + 200 C
-65 C to + 150 C
5.8 C/W
O
O
O
O
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CC
=28 V
P
OUT
= 20 W
I
C
= 200 mA
f = 1.0 MHz
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65
35
4.0
1.0
5.0
35
8.2
60
10
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
