2N5108
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The
2N5108
is a Designed for
General Purpose Class C Amplifier
Applications Up to 1 GHz.
PACKAGE STYLE TO-39
FEATURES:
•
G
PE
= 6.0 dB Typ. at 1.0 GHz
•
F
T
= 1,500 MHz Typ. at 15 V/ 50 mA
•
Hermetic
TO-39
Package
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
400 mA
55 V
30 V
3.5 W @ T
C
= 25 C
-65 to +200 C
-65 to +200 C
50 C/W
O
O
O
O
1 = Emitter
2 = Base
3 = Collector
CHARACTERISTICS
SYMBOL
BV
CER
BV
EBO
I
CES
I
CEO
f
t
C
OB
G
PE
η
C
I
E
= 100
µA
V
CE
= 50 V
V
CE
= 15 V
V
CE
= 15 V
V
CE
= 15 V
V
CB
= 30 V
V
CC
= 28 V
I
C
= 5.0 mA
T
A
= 25 C
O
NONE
TEST CONDITIONS
R
BE
= 10Ω
MINIMUM
55
3.0
TYPICAL
MAXIMUM
UNITS
V
V
1.0
T
C
= +150 C
O
µ
A
mA
µ
A
MHz
10.0
20
I
C
= 50 mA
f = 200 MHz
f = 1.0 MHz
1200
3.0
5.0
35
pF
dB
%
P
OUT
= 1.0 W
f = 200 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
