1N53
SILICON MIXER DIODE
PACKAGE STYLE DO- 36
DESCRIPTION:
The
ASI 1N53
is a Silicon Mixer
Diode Designed for low noise
performance in
Ka-Band Applications Operating up to
35 GHz.
FEATURES:
•
•
Low Noise Fugure
Wider Bandwith than cartridge
diodes inX Band
NONE
CHARACTERISTICS
SYMBOL
NF
V
SWR
Z
IF
R
L
= 100
Ω
T
C
= 25 C
O
TEST CONDITIONS
F = 9375 MHz
R
L
= 100
Ω
P
lo
= 1.0 mW
I
F
= 30 MHz
NF
Iif
= 1.5 dB
MINIMUM TYPICAL
MAXIM
13.1
1.6
UNITS
dB
f = 1000 Hz
P
lo
= 1.0 mW
I
F
= 30 MHz
NF
Iif
= 1.5 dB
400
35
800
Ω
GHz
F = 9375 MHz
Test
Frequency
R
L
= 100
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
