1N4386
SILICON MULTIPLIER VARACTOR DIODE
PACKAGE STYLE DO- 4
DESCRIPTION:
The 1N4396 is a High Power Silicon
Multiplier Varactor Diode.
MAXIMUM RATINGS
200 mA
IF
VR
250 V
20 W @ TC = 25 OC
-65 OC to +150 OC
-65 OC to +175 OC
5.0 OC/W
PDISS
TJ
1 = Anode
2 = Cathode
TSTG
θJC
CHARACTERISTICS TC = 25 O
C
SYMBOL
VBR
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
V
IR = 10 µA
VR = 6.0 V
VR = 6.0 V
PIN = 30 W
250
CT
RS
f = 1.0 MHz
20
50
pF
Ohms
W
f = 50 MHz
0.7
POUT(X3)
FIN = 150 MHz
15
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]