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ELECTRICAL CHARACTERISTICS
Symbol Parameter
Conditions
Drain-Source Breakdown VGS=0V,ID=5mA
Min
95
Typical Max
102
Unit
V
BR(DSS)
-
V
I
DSS
Drain Leakage Current
VGS=0V,VDS=48V
-
50
200
A
I
G
IRL1
GSS
1
Gate Leakage Current
Power Gain
Input Return Loss
VGS=5V,VDS=0V
F=1150MHz
F=1150MHz
F=1150MHz
VDD=50V,IDQ=100mA
VDD=5V, ID=300 A
-
17.5
-
46
1.1
0.7
1
5
-
-4
-
1.8
1.7
A
dB
dB
%
V
P
19.5
-7
48
1.45
1.2
1
D
VGS(Q)2 Gate Quiescent Voltage
VTH Threshold Voltage
V
PULSE CHARACTERISTICS
Symbol Parameter
Tr1
Tf1
Conditions
F=1150MHz
F=1150MHz
Min
Typical Max
Unit
Rise Time
Fall Time
-
-
-
<40
<15
0.25
50
nS
nS
dB
50
PD1
Pulse Droop
F=1150MHz
0.5
THERMAL CHARACTERISTICS
RUGGEDNESS PERFORMANCE
1NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10%
point of the pulse with pulse width = 10μsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broad-
band matched test xture.
2NOTE: Amount of gate voltage required to attain nominal quiescent current.
ASI [ ADVANCED SEMICONDUCTOR ]
