PB5006 thru PB5010
General Semiconductor
120
1000
T
A
= 150 °C
T
A
= 125 °C
100
T
A
= 100 °C
10
T
A
=
85
°C
100
80
60
Instantaneous Reverse Current (µA)
Forward Power Dissipation (W)
1
40
20
0.1
T
A
= 25 °C
0
0
5
10
15
20
25
30
35
40
45
50
55
0.01
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 3. Forward Power Dissipation
Figure 5. Typical Reverse Characteristics Per Diode
100
1000
T
A
= 150 °C
T
A
= 125 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
T
A
= 100 °C
T
A
= 25 °C
1
T
A
=
85
°C
Junction Capacitance (pF)
1.1
1.2
100
0.1
0.4
10
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 4. Typical Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
ASEMI [ 台湾ASEMI ]
