MBR30100PT
Da Hg-otg Shtk Rciir
ul ihVlae coty etfes
Poutr
rdco
Caatr
hrce
◆
◆
◆
◆
◆
◆
Hl Big Rciid omnCtoeSrcue
a f r d e e t f e 、C m o a h d t u t r .
Mliae Mtl-iio PtnilSrcue
utlyr ea Slcn oeta tutr.
LwPwrWse ihEfcec.
o o e a t ，H g f i i n y
BatflHg TmeaueCaatr
euiu ih eprtr hrce.
H v O e V l a e p o e t l o ，h g r l a i i y
ae vr otg rtc op ih eiblt.
RH Pout
os rdc.
R V 10
E : .1
T p c l R f r ne
y ia e eec
Dt
aa
VRRM= 100V
IF(AV)= 30A
PiayUe
rmr s
● LwVlaeHg FeunySicigPwrSpl.
o otg ih rqec wthn oe upy
● LwVlaeHg Feuny Ivr Crut
o otg ih rqec
nes ici.
● LwVlaeCniud CrutadPoeto
o otg otne
ici n rtcin
Crut
ici.
P lrt
o aiy
Smaie
umrz
■ M R 0 0 S h t k d o e i t e
manufacture uses the main
B310 coty id,n h
mi poestcnlg icue:
a n r c s e h o o y n l d s
Silicon epitaxial
substrate
P l o t c n l g , h
potential metal and the silicon
alloy
+ op ehooyTe
t c n l g , t e
device uses the two chip, the common
cathode
ehooy h
t e
Plastic package structure.
h
Aslt MxmmRtns
boue aiu aig
Ie
tm
MxmlIvre Rpttv Pa Vlae
aia netd eeiie ek otg
MxmlD Itrito Vlae
aia C nedcin otg
AeaeRciidFradCretT=5℃
vrg etfe owr urn C10
WoeDvc
hl eie
Uiaea
nltrl
Smo
ybl
VRRM
MBR30100
Ui
nt
V
V
VC
D
IA
FV
10
0
10
0
30
15
A
A
℃
℃
FradPa SreCretRtdLa 83Hl
owr ek ug urn(ae od . af
Msn Wv-codn t JDCMto)
sie aeAcrig o EE ehd
OeaigJnto Tmeaue
prtn ucin eprtr
SoaeTmeaue
trg eprtr
IS
FM
T
J
TT
SG
10
5
-0 +7
4- 15
-0 +7
4- 15
EetiiyCaatr
lcrct hrce
Ie
tm
I
R
VF
Ts Cniin
et odto
T =5
J 2℃
T =2℃
J 15
T =5
J 2℃
V=RM
RVR
IF=15A
Mnmm
iiu
Rpeet
ersn
aie
tv
MBR30100
Unit
10
0
1
0.85
u
A
m
A
V
www.asemi.tw
Pg
1
ae
ASEMI [ 台湾ASEMI ]
