MBR2040 THUR MBR2050
Dual High-Voltage Schottky Rectifiers
REV:1.01
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Half Bridge Rectified、Common Cathode Structure.
Multilayer Metal -Silicon Potential Structure.
Low Power Waste,High Efficiency.
Beautiful High Temperature Character.
Have Over Voltage protect loop,high reliability.
RoHs Product.
Productor
Character
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Typical Reference
Data
VRRM= 40V
IF(AV)= 20A
VRRM= 45V
IF(AV)= 20A
Primary Use
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency
● Low Voltage Continued
Invers Circuit.
VRRM= 50V
IF(AV)= 20A
Circuit and Protection Circuit.
■ MBR2040、MBR2045、MBR2050 Schottky diode,in the
manufacture uses the main process technology includes:
Silicon epitaxial substrate, P+ loop technology,The
potential metal and the silicon alloy technology, the
device uses the two chip, the common cathode, the plastic
package structure.
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
Average Rectified Forward Current TC=150℃
Device
Unilateral
Whole
Summarize
Polarity
Symbol MBR2040 MBR2045 MBR2050 Unit
VRRM
40
45
50
V
VDC
40
45
50
V
IFAV
20
10
A
A
℃
℃
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Operating Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
150
-40- +175
-40- +175
Electricity Character
Item
IR
VF
Test
TJ =25℃
TJ =125℃
TJ =25℃
Condition
VR=VRRM
IF=5A
Minimum
Represent
MBR2040 MBR2045 MBR2050 Unit
ative
200
uA
5
0.70
0.72
0.74
mA
V
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