ASX620
250-3000 MHz MMIC Amplifier
EU
2)
865.6~867.6
30.5
-15
-12
33
47.5
7.0
5
950
Korea
2)
910~914
29.5
-15
-8
33
48
6.7
5
950
Japan
2)
950~956
29
-15
-8
33
48
6.8
5
950
Country
Frequency (MHz)
USA
902~928
29
-15
-7.5
33
48
6.9
5
950
APPLICATION CIRCUIT
RFID(USA)
902 ~ 928 MHz
+5 V
Magnitude S21 (dB)
Magnitude S11 (dB)
Magnitude S22 (dB)
Output P1dB (dBm)
Output IP3
1)
(dBm)
Noise Figure (dB)
Device Voltage (V)
Current (mA)
1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
2) Test Results are measured by CDMA Tx(EU), GSM Rx(Korea), GSM Tx(Japan) Application circuits.
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
R1=3
W
C8=1
mF
C7=100pF
C6=3.9 pF
C5=100 pF
L2=100 nH
C1=68 pF
C4=9 pF
C2=1.2 pF
L3=2.2 nH
3 mm
RF IN
ASX620
3.5 mm
L1=82 nH
(Coil Inductor)
C3=68 pF RF OUT
Board Layout (FR4, 40x40 mm , 0.8T)
2
C10=1
mF
C9=100pF
S-parameters & K-factor
35
-5
30
-10
Gain (dB)
25
-15
20
S11 (dB)
700
800
900
1000
1100
1200
-20
15
-25
10
600
-30
600
700
800
900
1000
1100
1200
Frequency (MHz)
5
5
Frequency (MHz)
4
0
Stability Factor
700
800
900
1000
1100
1200
3
S22 (dB)
-5
2
-10
1
-15
600
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
8/8
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
