ASW216
5-4000 MHz MMIC Amplifier
Features
·14
dB Gain at 900 MHz
·20
dBm P1dB at 900 MHz
·37.5
dBm OIP3 at 900 MHz
·2.2
dB NF at 900 MHz
·MTTF
> 100 Years
·Single
Supply
Description
The ASW216, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both re-
ceiver and transmitter of telecommunication systems
up to 4 GHz. The amplifier is available in an SOT-89
package and passes through the stringent DC, RF,
and reliability tests.
ASW216
Package Style: SOT-89
Typical Performance
Parameters
Frequency
Gain
S11
S22
Output IP3
1)
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
900
14
-14
-15
37.5
2.2
20
80
4.5
Typical
2000
11.8
-14
-14
38
2.4
20
80
4.5
Application Circuit
·500
~ 3500 MHz
1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
19
70
36
13
Min
Typ
900
14
-14
-15
37.5
2.2
20
80
4.5
110
2.6
Max
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50ohm matched)*
Rating
-40 to
+85°C
-40 to
+150°C
+6 V
+150°C
25 dBm
Pin No.
1
2
3
Function
RF IN
GND
RF OUT / Bias
* Please find the max. input power data from
http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
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ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
