ASL563
High Gain, Low Noise Amplifier
Parameter
Power Gain
1)
2)
3)
3)
APPLICATION CIRCUIT
(TYPE 2)
Strip lines (P1 & P2)
GPS
1575 MHz
+3 V
Symbol
G
p
NF
RL
in
RL
out
P
o(1dB)
OIP3
I
cc
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz,
Non-RF
MIN.
24
TYP.
25
1.1
-15
-15
MAX.
Unit
dB
Noise Figure
1.3
dB
dB
dB
dBm
dBm
mA
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
4)
Output Power
Circuit Current
5)
8
17
10
19
7.7
1) Total gain is sum of the 1st stage and 2nd stage amplifiers (not include filter loss).
2) NF is that of the 1st stage amplifier.
3) S11 is that of the 1st stage amplifier and S22 is that of the 2nd stage amplifier.
4) OIP3 is that of the 2nd stage amplifier measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
5) Total current is the sum of the 1st stage and the 2nd stage amplifiers.
Schematic (with the striplines at the Pin 1 and 2)
RF IN2
Board Layout (FR4, 19.4x17.4 mm
2
, 0.8T)
Top
C8=1
mF
VDD2
BPF
C6=20 pF
C7=10 nF
R4=1.1 kW
L3=6.2 nH
R5=8.2 kW
R6=27
W
L4=6.2 nH
C5=1 pF
RF OUT2
RF OUT1
C1=1.2
pF
L1=5.6 nH
R1=9.1 kW
R3=24
W
ASL563
*P2
L2=6.8 nH
VDD1
C2=1
mF
R2=1.2
kW
C4=20 pF
C3=10 nF
*P1
Bottom
RF IN1
Note: the length of the strip line P1 and P2 are given as below at the PCB
with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.0 mm, Width: 0.3 mm
*P2 Length: 0.65 mm, Width: 0.3 mm
1st stage S-parameters & Noise Figure
30
20
S - parameter [dB]
10
S21
0
S(2,2)
S(1,1)
-10
S22
S12
S11
S22
-20
S11
-30
1400
1450
1500
1550
1600
1650
1700
1750
1800
Frequency [MHz]
5
1.5
1.4
freq (1.400GHz to 1.800GHz)
4
1.3
1.2
Stability Factor
3
Noise Figure
0
500
1000
1500
2000
2500
3000
3500
1.1
1.0
0.9
0.8
2
1
0.7
0.6
0
0.5
1400
1450
1500
1550
1600
1650
1700
1750
1800
Frequency (MHz)
Frequency (MHz)
9/22
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
August 2011
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
