ASL52D6
High Gain, Low Noise Amplifier
Parameter
Symbol
G
p
NF
RL
in
RL
out
P
o(1dB)
OIP3
I
cc
Test Conditions
F = 900 MHz
F = 900 MHz
F = 900 MHz
F = 900 MHz
F = 900 MHz
F = 900 MHz
F = 900 MHz
Non-RF
MIN.
TYP.
24
0.55
-18
-10
19
33
50
MAX.
Unit
dB
dB
dB
dB
dBm
dBm
mA
APPLICATION CIRCUIT
900 MHz
+5 V
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
3
rd
Intercept Point
Output Power
1)
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Vs=5 V
Board Layout (FR4, 25x25 mm , 0.8T)
2
C6=1
mF
C1=100 pF
C5=100 pF
L1=39 nH
ASL52D6
L2=33 nH
RF OUT
L2=6.8 nH
C7=100 pF
C3=100 pF
C1=100 pF
L3=8.2 nH
R1=5.1 kW
S-parameters & K-factor
30
5
0
-5
20
-10
-15
-20
5
-25
-30
25
Gain (dB)
15
10
0
0
300
600
900
1200
1500
1800
2100
S11 (dB)
0
300
600
900
1200
1500
1800
2100
Frequency (MHz)
5
0
8
-5
7
10
9
Frequency (MHz)
Stability Factor
S22 (dB)
-10
-15
-20
-25
-30
6
5
4
3
2
1
0
0
300
600
900
1200
1500
1800
2100
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
Frequency (MHz)
Frequency (MHz)
3/6
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
May 2012
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
