ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
G
p
NF
RL
in
RL
out
ISO
P
o(1dB)
OIP3
I
cc
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz,
Non-RF
MIN.
TYP.
20
1.6
-8
-9
-35
-5
5.5
4.0
MAX.
Unit
dB
dB
dB
dB
dB
dBm
dBm
mA
APPLICATION CIRCUIT
GPS
1575 MHz
+2.85 V /
20dB Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Current
1) OIP3 is measured with two tones at an output power of -20 dBm/tone separated by 1MHz.
Schematic
C3=1 pF
ASL226
Board Layout (FR4, 14x11.3 mm
2
, 0.8T)
Top
RF OUT
RF IN
C1=100 pF
L1=4.7 nH
L2=6.8 nH
C2=1
mF
R1=470
W
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
30
20
S21
S - parameter [dB]
10
0
-10
S(2,2)
S(1,1)
S22
S11
S11
S22
-20
-30
-40
-50
1400
S12
1450
1500
1550
1600
1650
1700
1750
1800
freq (1.400GHz to 1.800GHz)
Frequency [MHz]
5
Stability Factor
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
9/21
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
Load_stabcir[m1,::]
Source_stabcir[m1,::]
4
indep(Source_stabcir[m1,::]) (0.000 to 51.000)
indep(Load_stabcir[m1,::]) (0.000 to 51.000)
September 2012
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
