ASF130
2.4 Absolute Maximum Ratings
Parameters
Max. Ratings
-40 to 85 C
-40 to 150 C
+6 V
Operation Case Temperature
Storage Temperature
Device Voltage
Operation Junction Temperature
Input RF Power (CW, 50 matched)
+150 C
+25 dBm
2.5 Thermal Resistance
Symbol
Rth
Description
Thermal resistance from junction to lead
Typ
110
Unit
C/W
2.6 ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
MM
Class 1B
Class A
Voltage Level: 500 ~ 1000 V
Voltage Level: <200 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can
be damaged by static electricity. Proper ESD control techniques should be used when
handling these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
3/11
ASB Inc.
sales@asb.co.kr
February 2017
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
