MT330CB18T4
Electrical Characteristics
Symbol
Values
Units
Conditions
Min.
Typ.
Max.
1.6
VTM
VF
T=25℃ ITM =900A
T=25℃ ITM =900A
V
V
1.3
IRRM/IDRM
PGM
IGM
TVJ =TVJM ,VR=VRRM ,VD=VDRM
30
mA
W
10
2
A
VGT
IGT
TVJ =25℃ , VD =6V
TVJ =25℃ , VD =6V
2
V
150
mA
mA
mA
TVJ =25℃ , RG = 33
IL
400
200
IH
TVJ =25℃ , VD =6V
Performance Curves
500
W
0.20
rec.180
rec.120
℃/W
400
300
Zth(j-S)
Zth(j-C)
sin.180
rec.90
rec.60
cont.
rec.30
0.10
200
100
PTAV
0
0.001
t
0.01
0.1
1
10
S
100
0
IT
100
200
A
300
Fig1. Power dissipation
Fig2. Transient thermal impedance
A
900
50HZ
9000
A
600
Typ.
4500
max.
300
25℃
IT
0
- - -125℃
0
0
VTM
0.5
1.0
1.5
V
2.0
10
100
ms 1000
Fig3. Forward Characteristics
Fig4. Max Non-Repetitive Forward Surge
Current
Document Number: S-M0054
Rev.1.0, May.31, 2013
www.apt-semi.com
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APTSEMI [ Jiangsu APT Semiconductor Co.,Ltd ]
