MT150DT18L2
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
Tc=93℃, Single Phase half wave
ITAV
Average On-State Current
150
A
180o conduction
TVJ=45℃ t=10ms (50Hz), sine
VR=0
ITSM
Surge On-State Current
1500
A
i2t
Visol
Tvj
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
11250
3000
A2s
V
a.c.50HZ;r.m.s.;1 min
-40 to +125
-40 to +125
2±15%
℃
Tstg
Mt
℃
Mounting Torque
To terminals(M4)
To terminals(M6)
To heatsink(M6)
Nm
Mt
5±15%
Ms
5±15%
Nm
Critical Rate of Rise of On-State
Current
TVJ=TVJM, VD=1/2VDRM ,IG =100mA
diG/dt=0.1A/μs
di/dt
150
500
A/μs
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM,VD=2/3VDRM,linear voltage
rise
dv/dt
V/μs
Electrical and Thermal Characteristics
Values
Min. Typ. Max.
Symbol
Item
Conditions
Units
VTM
Peak On-State Voltage, max.
T=25℃ IT =150A
1.35
V
Repetitive Peak Reverse Current,
IRRM/IDRM max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD
=VDRM
40
mA
VGT
IGT
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Thermal Impedance, max.
TVJ =25℃ , VD =6V
TVJ =25℃ , VD =6V
Junction to Case
Case to Heatsink
3
V
150
0.16
0.07
mA
Rth(j-c)
℃/W
℃/W
Rth(c-s) Thermal Impedance, max.
Document Number: S-M0058
Rev.1.0, May.31, 2013
www.apt-semi.com
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