TR4A60S
Electrical Characteristics
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
VTM
Tj = 125 °C
---
--
─
---
--
─
2.0
1.7
5
mA
Peak On-State Voltage
V
ITM = 5.5A, tp=380㎲
I+
Ⅰ
GT1
I -
V
D = 12V, RL=30 Ω
Gate Trigger Current
5
mA
Ⅱ
─
-
GT1
I -
5
Ⅲ
─
---
---
-
--
GT3
I+GT4
IV
10
1.5
V+GT1
---
Ⅰ
-
V
D = 12 V, RL=30 Ω
---
---
1.5
1.5
1.5
─
V
Gate Trigger Voltage
V GT1
Ⅱ
VG-T3
─
─
Ⅲ
+
V
GT4
IV
---
---
VGD
Tj = 125 °C, VD=VDRM RL=3.3kΩ
Non-Trigger Gate Voltage
V
0.25
20
---
─
Tj = 125 °C,
VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage
dv/dt
IH
V/㎲
─
Holding Current
It=0.1A
---
---
10
mA
2/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
