TF8A80
Electrical Characteristics (Tj=25 °C unless otherwise specified)
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
VTM
mA
─
---
─
─
─
─
─
─
2
Tj = 125 °C
ITM = 11 A, TP=380㎲
Peak On-State Voltage
1.55
30
V
─
─
─
─
─
─
I+
Ⅰ
GT1
I -
V
V
D = 12 V, RL=30 Ω
Gate Trigger Current
30
mA
Ⅱ
GT1
I -
30
Ⅲ
Ⅰ
GT3
V+
1.5
1.5
1.5
─
GT1
V-GT1
D =12 V, RL=30 Ω
Gate Trigger Voltage
V
V
Ⅱ
V-GT3
VGD
Ⅲ
─
─
Tj= 125 °C, VD = VDRM,
R
3.3K Ω
L=
Non-Trigger Gate Voltage
0.2
---
Tj = 125 °C,
Critical Rate of Rise Off-State
Voltage
dv/dt
IH
200
--
--
V/㎲
VD=2/3 VDRM
Holding Current
I =0.2A
T
--
mA
--
50
2/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
