CD6C60S
Sensitive Gate Silicon Controlled Rectifiers
Symbol
○
2. Anode
BV
DRM
= 600V
I
T(RMS)
=
5A
TO-252
▼
○
3.Gate
I
TSM
=
36A
1 2
3
1.Cathode
○
Features
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
=
5
A )
Non-isolated TO-252 Package
General Description
Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage
capability and also suit able for over voltage protection, motor control circuit in power tool, inrush cur-
rent limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
FGM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
sine wave,50 to 60Hz
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
T
j
= 110 °C
T
j
= 110 °C
T
j
= 110 °C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
Ratings
600
5
36
1
0.1
1
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
W
w
A
°C
°C
June, 2010. Rev.
1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/5
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
