TF12A60
Electrical Characteristics (Tj=25 °C unless otherwise specified)
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
VTM
---
---
─
─
─
─
─
─
─
2 .0
mA
V
Tj = 125 °C
---
ITM = 17 A, tp=380㎲
---
Peak On-State Voltage
1.55
I+
30
Ⅰ
─
─
GT1
I -
V
V
D = 12V, RL=30 Ω
Gate Trigger Current
30
30
1.5
1.5
1.5
-
mA
Ⅱ
GT1
I -
Ⅲ
Ⅰ
─
GT3
V+
─
GT1
V-GT1
D = 12 V, RL=30 Ω
Gate Trigger Voltage
V
V
Ⅱ
─
V-GT3
VGD
Ⅲ
─
TJ = 125 °C, VD = VDRM RL=3.3kΩ
Non-Trigger Gate Voltage
0.2
TJ = 125 °C
Critical Rate of Rise Off-State
Voltage
dv/dt
IH
V/㎲
mA
─
─
VD=2/3 VDRM
200
Holding Current
I =0.2A
T
50
─
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2/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
