TD4A60S
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
102
101
100
10-1
101
100
10-1
VGK = 5V
PGK = 5W
PG(AV) = 0.5W
25
℃
125o
C
25o
C
VGD = 0.2V
102
0.5
1.0
1.5
2.0
2.5
3.0
101
103
Gate Current [mA]
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
7
6
5
4
3
2
1
0
130
θ
π
π
2
θ
θ
θ
= 180o
= 150o
= 120o
θ
360°
120
110
100
θ
= 90o
θ
: Conduction Angle
θ
θ
= 60o
= 30o
θ
θ
= 30o
= 60o
θ
π
π
2
θ
θ
θ
= 90o
= 120o
= 150o
= 180o
360°
θ
θ
θ
: Conduction Angle
0
1
2
3
4
5
0
1
2
3
4
5
RMS On-State Current [A]
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
35
30
25
20
15
10
5
10
60Hz
1
50Hz
0.1
-50
0
100
101
102
103
0
50
100
150
Junction Temperature [ oC]
Time (cycles)
3/5
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
