CP10C60
Standard Gate Silicon Controlled Rectifiers
Symbol
○
2. Anode
TO-220F
BV
DRM
= 600V
I
T(RMS)
= 12 A
▼
○
3.Gate
I
TSM
= 120A
1
2
3
1.Cathode
○
Features
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 12 A )
ISOLATED TYPE
General Description
Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage
capability and also suit able for over voltage protection, motor control circuit in power tool, inrush cur-
rent limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
di/dt
P
G(AV)
T
J
T
STG
( Tj = 25°C unless otherwise specified )
Condition
sine wave,50 to 60Hz
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I
pk
=
20A, I
GT
=20mA
Tj=110 °C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
Critical rate of rise of on-state current
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
Ratings
600
12
120
50
0.5
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A/us
W
°C
°C
May, 2010,
Rev.
1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/5
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
