TF12A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
1
V
GM
(10V)
10
2
P
G(AV)
(1W)
25
℃
10
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
T
J
= 125 C
10
1
o
I
GM
(2A)
0
T
J
= 25 C
10
0
o
10
-1
V
GD
(0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
16
14
Fig 4. On State Current vs.
Allowable Case Temperature
130
Power Dissipation [W]
π
θ
360°
θ
2
π
12
10
8
6
4
2
0
0
2
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
o
o
o
Allowable Case Temperature [
o
C]
120
110
100
θ
: Conduction Angle
π
90
80
70
θ
θ
= 30
2
π
o
o
θ
= 60
θ
θ
θ
θ
8
10
12
θ
360°
θ
: Conduction Angle
= 90
o
= 120
o
= 150
o
= 180
14
o
4
6
8
10
12
14
0
2
4
6
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
150
V
GT
(t C)
o
o
60Hz
100
V
GT
(25 C)
V
1
_
GT3
V
V
+
GT1
_
GT1
50
50Hz
0
0
10
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
